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MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
Features
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* These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
30 VOLTS, 2.0 AMPS PNP TRANSISTORS
COLLECTOR 3
MAXIMUM RATINGS (TA = 25C)
Rating Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Value -30 -50 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc A 1 Symbol PD Max 310 2.5 403 Unit mW mW/C C/W 2 3 SOT-23 (TO-236) CASE 318 STYLE 6 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Total Device Dissipation (Ref. Figure 8) (Single Pulse < 10 sec.) Junction and Storage Temperature
RqJA PD
MARKING DIAGRAM
G3 M G G 1 G3 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
710 5.7 176
mW mW/C C/W
RqJA PDsingle TJ, Tstg
575 -55 to +150
mW C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad
ORDERING INFORMATION
Device MMBT589LT1G Package Shipping SOT-23 3,000 / Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2009
August, 2009 - Rev. 5
1
Publication Order Number: MMBT589LT1/D
MMBT589LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -30 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 3) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) Base -Emitter Saturation Voltage (Note 3) (Figure 2) (IC = -1.0 A, IB = -0.1 A) Base -Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 80 40 - - - - - 100 - - 300 - - -0.25 -0.30 -0.65 -1.2 -1.1 - 15 - V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO -30 -50 -5.0 - - - - - - -0.1 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc mAdc Symbol Min Max Unit
VCE(sat)
V
VBE(sat) VBE(on) fT Cobo
V V MHz pF
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MMBT589LT1G
200 VCE = -2.0 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 150 230 210 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 50 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) -55C 25C 125C VCE = -1.0 V
100
50
Figure 1. DC Current Gain versus Collector Current
Figure 2. DC Current Gain versus Collector Current
1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE(sat) VBE(sat) VBE(on)
1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC/IB = 100 IC/IB = 10
Figure 3. "On" Voltages
Figure 4. Base Emitter Saturation Voltage versus Collector Current
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS)
1.0
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 IC/IB = 100
0.8
0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 0.1 1.0 10 100 IB, BASE CURRENT (mA) 50 mA
1000
Figure 5. Collector Emitter Saturation Voltage versus Collector Current
Figure 6. Collector Emitter Saturation Voltage versus Collector Current
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MMBT589LT1G
10 IC , COLLECTOR CURRENT (AMPS) SINGLE PULSE TEST AT Tamb = 25C 100 ms
1s 1.0
100 ms
10 ms
1 ms
2s 0.1
0.01 0.1 1.0 10 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 100
Figure 7. Safe Operating Area
0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1
1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
Figure 8. Normalized Thermal Response
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MMBT589LT1G
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
SEE VIEW C 3
E
1 2
HE c e b q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A A1 L L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MMBT589LT1/D

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